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中红外超级LED37系列波长3.70-3.85um开关时间30ns使用温度-240度至50度TO-18封装 LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.LightEmittingDiodeswithcentralwavelength3,75mmseriesarebasedonheterostructuresgrownonInAssubstratesbyMOCVD.InAsSbisusedintheactivelayer.WidebandgapsolidsolutionsInAsSbPwithPcontent50%areusedforgoodelectronconfinement.