价格:未填
供应:99999
发货:3天内
主要特点及优点最具成本效益的自动参数测试系统在高度灵活性和快速测试开发十分重要的地方，在广泛的产品平台上进行了最优化三种系统配置可选择 基础配置用于常规工艺监测目的 低电流配置用在压微米硅MOS技术 高电压配置用于汽车电子和电源管理器件与流行的汽车探针组件兼容操作可引出线缆的测试配置最大化了探针接口的灵活性和外部电压范围 与吉时利9139A型探针卡兼容 支持对已有的5英寸探针卡库进行重用该经过证明的仪器技术在实验室和工厂环境都能提供高精度和可重复的测量吉时利新的S530参数测试系统构建于我们久经考验的资源和测量技术，并针对工艺控制监测、工艺可靠性检测和器件描述等应用需要的DC和C-V测量进行设计。吉时利公司为全球半导体产业客户提供广泛的标准和客户定制参数测试系统，已经有超过30年的经验软件处理能力：探针台全自动控制 2. 实时IV/CV曲线 3. 自定义设置参数界面，提供脚本语言编辑器，方便定义数据报表格式 主要测量项目列表：BVDSS(DrainSourcevoltagebreakdown,gatesourceshorted)BVDSV(DrainSourcevoltagebreakdown,gatebiased)BVGDO(GateDrainvoltagebreakdown,sourceopened)BVGDS(GateDrainvoltagebreakdown,sourcedrainshorted)BVGSO(Gatesourcevoltagebreakdown,drainopened)IDL(Drainleakagecurrent,gatesourceshorted)IDS(singlepointDraincurrent)IDVD(ID-VDcurve)IDVG(ID-VGcurve)IDVG@VSUB(ID-VGcurvewithstepsubstratevoltage)IGL(Singlepointgateleakagecurrent)IGVG(IG-VGcurve)ISD(singlepointsourcecurrent)ISL(sourceleakage)ISUBVG(Isub-Vgcurve)SO(Subthresholdvoltageswing)VTH_CI(ConstantcurrentVth)VTH_EX(MaxGMVth)VTH_LLSQ(LinearextrapolatedVth)VTH_SEL(SelfbiasingVth)BVCBO(collector-basebreakdownvoltagewithemitteropen)BVCEI(collector-emitterbreakdownvoltagewithbiasI)BVCEO(collector-emitter(baseopen) breakdownvoltage)BVCES(collector-emitter(base-emittershorted) breakdownvoltage)BVCEV(collector-emitter(basebias) breakdownvoltage)BVEBO(emitter-base(collector-open)breakdownvoltage)BVECO(emitter-collector breakdownvoltageatopeningbase)HFE_SW(DCcurrentgainsweepmethod)HFE_TRA1(DCcurrentgain,traditionalmethod)IBCO(base-collectorcurrent,collectoropened)IBEO(base-collectorcurrent,emitteropened)IBICVBE(IBandICvsVBEcurves)IBVBE(IBvsVBEcurve)ICBO(collector-emittercutoffcurrent,baseopened)ICEO(collector-emittercutoffcurrent,baseopened)ICES(collector-emittercutoffcurrent,base-emittershorted)ICEV(collector-emittercutoffcurrent,basebiased)ICVCB(IC-VCBcurve)ICVCE@IB(IC-VCBcurvewithBasedbiasedcurrent)ICVCE_VB(IC-VCBcurvewithBasedbiasedvoltage)IEBO(emitter-basecutoffcurrent,collectoropened)IECO(emitter-collectorcurrent,baseopened)IEVEB(IE-VEBcurve)VBCO(base-collectorvoltage,emitteropen)VCE(collector-emittervoltage)DynamicZ_I1I2(DynamicImpedance)Ifd_Vfd(Forwadcurrent@forwardbiasV)Ileakage_Vrd(Leakagecurrent@reversebiasV)Vbr_Ird(Reversebreakdownvoltage)Vfd_Ifd(Forwardvoltage@forwardbiasI)Vfd_Ifd_vsweep(ForwardI-Vsweep)Vrd_Ird(Reversevoltage@reversebiasI)Vrd_Ird_vsweep(ReverseI-Vsweep)